PBLS2003D datasheet(7/17 Pages) NEXPERIA

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PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

6 of 16

NXP Semiconductors

PBLS2003D

20 V PNP BISS loadswitch

Characteristics

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −20 V; IE =0A

−0.1

µA

VCB = −20 V; IE =0A;

Tj = 150 °C

−50

µA

ICES

collector-emitter

cut-off current

VCE = −20 V; VBE =0V

−0.1

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−0.1

µA

hFE

DC current gain

VCE = −2 V; IC = −1 mA

220

495

VCE = −2 V; IC = −100 mA

220

440

VCE = −2 V; IC = −500 mA

[1] 220

310

VCE = −2 V; IC = −1A

[1] 155

220

VCE = −2 V; IC = −2A

[1] 60

120

VCEsat

collector-emitter

saturation voltage

IC = −100 mA; IB = −1mA

−55

−90

IC = −500 mA; IB = −50 mA

[1] -

−100

−150

IC = −1 A; IB = −50 mA

[1] -

−200

−300

IC = −1 A; IB = −100 mA

[1] -

−185

−280

RCEsat

collector-emitter

saturation resistance

IC = −1 A; IB = −100 mA

[1] -

185

280

Ω

VBEsat

base-emitter

saturation voltage

IC = −1 A; IB = −50 mA

[1] -

−0.95 −1.1

IC = −1 A; IB = −100 mA

[1] -

−1

−1.1

VBEon

base-emitter

turn-on voltage

VCE = −5 V; IC = −1A

[1] -

−0.85 −1.1

delay time

IC = −1 A; IBon = −50 mA;

IBoff =50mA

-8

rise time

ton

turn-on time

storage time

140

fall time

toff

turn-off time

185

transition frequency

IC = −50 mA; VCE = −10 V;

f = 100 MHz

150

185

MHz

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

-15

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