PBLS4002Y

40 V, 500 mA PNP loadswitch transistor

1 January 2023

Product data sheet

1. General description

PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363

(SC-88) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• Low VCEsat transistor and resistor-equipped transistor in one package

• Low threshold voltage (<1 V) compared to MOSFET

• Low drive power required

• Space-saving solution

• Reduction of component count

3. Applications

• Supply line switches

• Battery charger switches

• High-side switches for LEDs, drivers and backlights

• Portable equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1: PNP low VCEsat transistor

VCEO

collector-emitter

voltage

open base

-

-

-40

V

IClim

limiting collector current

-

-

-500

mA

RCEsat

collector-emitter

saturation resistance

IC = -500 mA; IB = -50 mA;

Tamb = 25 °C; pulsed; tp ≤ 300 µs;

δfactor ≤ 0.02

-

440

700

mΩ

TR2: NPN resistor-equipped transistor

VCEO

collector-emitter

voltage

open base

-

-

50

V

IO

output current

-

-

100

mA

R1

bias resistor 1 (input)

3.3

4.7

6.1

kΩ

R2/R1

bias resistor ratio

0.8

1

1.2