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HIP6601ACB Scheda tecnica(PDF) 1 Page - Renesas Technology Corp

Il numero della parte HIP6601ACB
Spiegazioni elettronici  Synchronous Rectified Buck MOSFET Drivers
PDF  11 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6601ACB Scheda tecnica(HTML) 1 Page - Renesas Technology Corp

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1
®
FN4884.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
HIP6601A, HIP6603A, HIP6604
Synchronous Rectified Buck MOSFET
Drivers
The HIP6601A, HIP6603A and HIP6604 are high frequency,
dual MOSFET drivers specifically designed to drive two
power N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with a HIP63xx
or an ISL65xx Multi-Phase Buck PWM controller form a
complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601A drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603A drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604 can be configured as
either a HIP6601A or a HIP6603A.
The output drivers in the HIP6601A, HIP6603A and HIP6604
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns
transition time. These products implement bootstrapping on
the upper gate with only an external capacitor required. This
reduces implementation complexity and allows the use of
higher performance, cost effective, N-Channel MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC and EPSOIC and 16 Lead QFN
Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinouts
HIP6601ACB, HIP6603ACB (SOIC)
HIP6601ECB, HIP6603ECB (EPSOIC)
TOP VIEW
HIP6604 (QFN)
TOP VIEW
Ordering Information
PART NUMBER
TEMP. RANGE
(oC)
PACKAGE
PKG.
DWG. #
HIP6601ACB
0 to 85
8 Ld SOIC
M8.15
HIP6603ACB
0 to 85
8 Ld SOIC
M8.15
HIP6601ACB-T
8 Ld SOIC Tape and Reel
HIP6603ACB-T
8 Ld SOIC Tape and Reel
HIP6601ECB
0 to 85
8 Ld EPSOIC
M8.15B
HIP6603ECB
0 to 85
8 Ld EPSOIC
M8.15B
HIP6601ECB-T
8 Ld EPSOIC Tape and Reel
HIP6603ECB-T
8 Ld EPSOIC Tape and Reel
HIP6604CR
0 to 85
16 Ld 4x4 QFN L16.4x4
HIP6604CR-T
16 Ld 4x4 QFN Tape and Reel
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
PVCC
VCC
LGATE
1
3
4
15
NC
BOOT
PWM
GND
16
14
13
2
12
10
9
11
6
57
8
NC
PVCC
LVCC
VCC
Data Sheet
August 2004
OBS
OLET
E PR
ODU
CT
RECO
MME
NDED
REPLA
CEM
ENT
PRO
DUC
T
HIP66
01B,
HIP66
03B


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