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BAS29 Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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BAS29 Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1999 May 21 5 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 (1) (2) 200 300 200 0 100 MBG440 Tamb ( oC) IF (mA) Fig.3 Forward current as a function of forward voltage. handbook, halfpage 02 600 0 200 400 MBH280 1 IF (mA) VF (V) (1) (2) (3) (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj =25 °C prior to surge. handbook, full pagewidth MBH327 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 |
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