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BAS35 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BAS35 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1999 May 21 2 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max. 600 mA • Repetitive peak reverse current: max. 600 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. MARKING TYPE NUMBER MARKING CODE BAS29 L20 BAS31 L21 BAS35 L22 PINNING PIN DESCRIPTION BAS29 BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode Fig.1 Simplified outline (SOT23) and symbols. handbook, halfpage 21 3 a. Simplified outline. c. BAS31 diode. b. BAS29 diode. d. BAS35 diode. MAM233 1 2 3 1 2 3 1 2 n.c. 3 |
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