1996 Sep 17

2

Philips Semiconductors

Product specification

High-speed diode

BAV105

FEATURES

• Small hermetically sealed glass

SMD package

• High switching speed: max. 6 ns

• General application

• Continuous reverse voltage:

max. 60 V

• Repetitive peak reverse voltage:

max. 60 V

• Repetitive peak forward current:

max. 600 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAV105 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the small hermetically sealed glass SOD80C SMD

package.

Fig.1 Simplified outline (SOD80C) and symbol.

Cathode indicated by black band.

handbook, 4 columns

MAM061

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

60

V

continuous reverse voltage

−

60

V

continuous forward current

see Fig.2; note 1

−

300

mA

repetitive peak forward current

−

600

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

9A

t = 100

µs

−

3A

t=1s

−

1A

total power dissipation

−

500

mW

storage temperature

−65

+200

°C

junction temperature

−

200

°C