BAS101_BAS101S

© Nexperia B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 14 December 2009

3 of 11

Nexperia

BAS101; BAS101S

High-voltage switching diodes

5.

Limiting values

[1] Tj =25 °C prior to surge

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

-300

V

series connection

-

600

V

VR

reverse voltage

-

300

V

series connection

-

600

V

IF

forward current

-

200

mA

series connection

-

100

mA

IFRM

repetitive peak forward

current

tp ≤ 1 ms;

δ≤

0.25

-1

A

IFSM

non-repetitive peak forward

current

square wave;

tp ≤ 1 μs

[1] -9

A

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[2] -250

mW

Tj

junction temperature

-

150

°

C

Tamb

ambient temperature

−

65

+150

°

C

Tstg

storage temperature

−

65

+150

°

C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W