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STTH812G Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STTH812G Scheda tecnica(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() STTH812 Characteristics 5/11 Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) Figure 13. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, ecu = 35 µm) 200 300 400 500 600 700 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.5 x V max. FR F 1 10 100 1000 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 S (cm²) CU R (°C/W) th(j-a) |
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