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AS6WA5128 Scheda tecnica(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS6WA5128 Scheda tecnica(HTML) 2 Page - Alliance Semiconductor Corporation |
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2 / 9 page ![]() ® 2 ALLIANCE SEMICONDUCTOR 10/6/00 AS6WA5128 Functional description The AS6WA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 55 ns are ideal for low-power applications. Active high and low chip selects (CS) permit easy memory expansion with multiple-bank memory systems. When CS is high, the device enters standby mode: the AS6WA5128 is guaranteed not to exceed 72 µW power consumption at 3.6V and 55ns. The device also returns data when VCC is reduced to 1.5V for even lower power consumption. A write cycle is accomplished by asserting write enable ( WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is written on the rising edge of WE (write cycle 1) or CS (write cycle 2).To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. All chip inputs and outputs are CMOS-compatible, and operation is from a single 3.0 to 3.6V supply. The device is available in the JEDEC standard 36(48)-ball FBGA package. Absolute maximum ratings Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func- tional operation of the device at these or any other conditions outside those indicated in the operational sections of this spec ification is not implied. Expo- sure to absolute maximum rating conditions for extended periods may affect reliability. Truth table Key: X = Don’t care, L = Low, H = High. Parameter Device Symbol Min Max Unit Voltage on VCC relative to VSS VtIN –0.5 VCC + 0.5 V Voltage on any I/O pin relative to GND VtI/O –0.5 V Power dissipation PD –1.0 W Storage temperature (plastic) Tstg –65 +150 °C Temperature with VCC applied Tbias –55 +125 °C DC output current (low) IOUT –20 mA CS WE OE Supply Current I/O1–I/O8 Mode HX X ISB High Z Standby (ISB) LX X ISB High Z Standby (ISB) LH H ICC High Z Output disable (ICC) LH L ICC DOUT Read (ICC) LL X ICC DIN Write (ICC) |
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