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Motore di ricerca datesheet componenti elettronici |
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BFG25AW/X Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BFG25AW/X Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page  1998 Sep 23 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. PINNING PIN DESCRIPTION BFG25AW 1 collector 2 base 3 emitter 4 emitter BFG25AW/X 1 collector 2 emitter 3 base 4 emitter MARKING TYPE NUMBER CODE BFG25AW N6 BFG25AW/X V1 Fig.1 SOT343N. fpage Top view MBK523 2 1 3 4 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 8V VCEO collector-emitter voltage open base −− 5V IC collector current (DC) −− 6.5 mA Ptot total power dissipation Ts ≤ 85 °C −− 500 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V 5080200 Cre feedback capacitance IC = 0; VCE = 1 V; f = 1 MHz − 0.2 0.3 pF fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =25 °C 3.5 5 − GHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb =25 °C − 16 − dB F noise figure Γ s =Γopt; IC = 1 mA; VCE =1V; f=1GHz − 2 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8V VCEO collector-emitter voltage open base − 5V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 6.5 mA Ptot total power dissipation Ts ≤ 85 °C; see Fig.2; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C |
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