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BFG67/X Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BFG67/X Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page ![]() 1998 Oct 02 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation Ts ≤ 65 °C; see Fig.3; note 1 − 380 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 0 200 MBC984 - 1 150 P tot (mW) T s (o C) THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 290 K/W |
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