BAS29 datasheet(5/10 Pages) NEXPERIA

Il numero della parte	BAS29

Spiegazioni elettronici	General purpose controlled avalanche (double) diodes

PDF	10 Pages

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Produttore elettronici	NEXPERIA [Nexperia B.V. All rights reserved]

Homepage	https://www.nexperia.com/

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5 / 10 page

2003 Mar 20

NXP Semiconductors

Product data sheet

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 10 mA

−

750

IF = 50 mA

−

840

IF = 100 mA

−

900

IF = 200 mA

−

IF = 400 mA

−

1.25

reverse current

see Fig.5

VR = 90 V

−

100

VR = 90 V; Tj = 150 °C

−

100

µA

V(BR)R

reverse avalanche breakdown

voltage

IR = 1 mA

120

170

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.7

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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