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HY64UD16162M Scheda tecnica(PDF) 4 Page - Hynix Semiconductor

Il numero della parte HY64UD16162M
Spiegazioni elettronici  1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
PDF  11 Pages
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Produttore elettronici  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY64UD16162M Scheda tecnica(HTML) 4 Page - Hynix Semiconductor

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HY64UD16162M Series
4
Revision 1.7
March. 2002
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vdd
Supply Voltage
2.7
Unit
V
Typ.
3.0
Max.
3.3
VSS
Ground
0
V
-
0
VIH
Input High Voltage
2.2
V
-
Vdd+0.3
VIL
Input Low Voltage
-0.31
V
-
0.6
DC ELECTRICAL CHARACTERISTICS
Vdd=2.7V~3.3V, TA= -25
°C to 85°C(E) / -40°C to 85°C(I)
CAPACITANCE
(Temp = 25
°C, f=1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(Add, /CS1, CS2, /WE, /OE, /UB, /LB)
Unit
pF
Max.
8
Condition
VIN=0V
COUT
Output Capacitance(I/O)
pF
10
VI/O=0V
Note : These parameters are sampled and not 100% tested
Sym.
Parameter
Min.
ILI
Input Leakage Current
-1
Unit
µA
Typ.
-
Max.
1
Test Condition
VSS
≤VIN≤Vdd
ILO
Output Leakage Current
-1
µA
-
1
VSS
≤VOUT≤Vdd,
/CS1=VIH, CS2=VIH,
/OE=VIH or /WE=VIL
ICC
Operating Power Supply Current
-
mA
-
3
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, II/O=0mA
ICC1
Average Operating Current
-
mA
-
25
-
mA
-
5
/CS1
≤ 0.2V, CS2 ≥Vdd-0.2V,
VIN
≤0.2V or VIN≥Vdd-0.2V,
Cycle Time=1
µs.
100% Duty, II/O=0mA
ISB
TTL Standby Current
-
mA
-
0.5
/CS1,CS2=VIH or /UB,/LB= VIH
ISB1
Standby Current(CMOS Input)
-
µA
-
85
/CS1, CS2
≥Vdd-0.2V
or /UB,/LB
≥Vdd-0.2V
VOL
Output Low Voltage
-
V
-
0.4
IOL=2.1mA
VOH
Output High Voltage
2.4
V
-
-
IOH=-1.0mA
ICC2
IDPD
Deep Power Down Curent
-
µA
-
2
CS2
≤VSS+0.2V
70ns
-
µA
-
75
85ns
-
mA
-
20
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, Cycle Time=Min.
100% Duty, II/O=0mA
70ns
85ns



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