STTH810G datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STTH810

Characteristics

3/11

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 8 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

Softness factor

IF = 8 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

tfr

Forward recovery time

IF = 8 A

dIF/dt = 50 A/µs

VFR = 1.5 x VFmax, Tj = 25° C

300

VFP

Forward recovery voltage

IF = 8 A, dIF/dt = 50 A/µs,

Tj = 25° C

5.5

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

P(W)

012

34567

=0.05

=0.1

=0.2

=0.5

I(A)

F(AV)

(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

j=25°C

(Maximum values)

j=150°C

(Maximum values)

j=150°C

(Typical values)

(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

DO-220AB

D²PAK

t(s)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

TO-220FPAB

t(s)

STTH810G Scheda tecnica(PDF) 3 Page - STMicroelectronics

STTH810G Scheda tecnica(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Scheda tecnica Scarica

Link URL