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BGE67BO/SC Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BGE67BO/SC Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page ![]() 1998 Aug 31 3 Philips Semiconductors Preliminary specification Optical receiver module BGE67BO/SC LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). CHARACTERISTICS Bandwidth 5 to 300 MHz; VB =24V; Tmb =30 °C; ZL =75 Ω. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT f frequency range 5 300 MHz Tstg storage temperature −40 +85 °C Tmb operating mounting base temperature −20 +85 °C Pin optical input power continuous − 5mW ESD ESD sensitivity human body model; R= 1.5 k Ω; C = 100 pF 500 − V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT S responsivity λ = 1300 nm 750 − V/W Vpin 1 pin 1 monitor voltage λ = 1300 nm 0.75 1 V/mW FL flatness of frequency response −±0.3 dB S22 output return losses f = 5 to 300 MHz 15 − dB optical input return losses 45 − dB OBRC connector optical return losses 60 − dB ILC connector optical insertion losses − 0.5 dB d2 second order distortion note 1 −−70 dB d3 third order distortion note 2 −−80 dB F equivalent noise input f = 10 to 300 MHz − 7pA/ √Hz sλ spectral sensitivity λ = 1310 ±20 nm 0.85 − A/W λ = 1550 ±20 nm 0.9 − A/W λ optical wavelength 1 290 1 600 nm L length of optical fibre buffered fibre; SM type; 9/125 µm; kevlar buffer: 3 mm 817 917 mm Itot total current consumption (DC) note 3 160 190 mA Notes 1. Two laser test; each laser with 40% modulation index; fp = 20.25 MHz; Pp = 0.5 mW; fq = 34 MHz; Pq = 0.5 mW; measured at fp +fq = 54.25 MHz. 2. Three laser test; each laser with 40% modulation index; fp = 125.25 MHz; Pp = 0.33 mW; fq = 110.25 MHz; Pq = 0.33 mW; fr = 135.25 MHz; Pr = 0.33 mW; measured at fp +fq − fr = 100.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. Fig.2 Monitor current pin. handbook, halfpage MLB151 10 k Ω 1 k Ω Pin 1 photo current |
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