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STTH3R02Q Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STTH3R02Q
Spiegazioni elettronici  Ultrafast recovery diode
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH3R02Q Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH3R02
4/9
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-15
(Epoxy printed circuit board FR4,
eCU =35µm)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
(Epoxy printed circuit board FR4,
eCU =35µm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)/Rth(j-a)
Single pulse
DO-15
Lleads=10mm
tP(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)/Rth(j-a)
Single pulse
SMC
S
cu=1cm²
tP(s)
Figure 7.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 8.
Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
10
20
30
40
50
60
70
80
10
100
1000
Q
RR(nC)
I
F=3A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 9.
Reverse recovery time versus dIF/dt
(typical values)
Figure 10.
Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
10
100
1000
t
RR(ns)
I
F=3A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0
1
2
3
4
5
6
7
8
10
100
1000
I
RM(A)
I
F=3A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)



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