BLF248 datasheet(3/13 Pages) PHILIPS

3 / 13 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF248

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise speciﬁed.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

±V

gate-source voltage

−

DC drain current

−

Ptot

total power dissipation

up to Tmb = 25 °C total device;

both sections equally loaded

−

500

Tstg

storage temperature

−65

150

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-mb

thermal resistance from

junction to mounting base

total device; both sections

equally loaded.

0.35 K/W

Rth mb-h

thermal resistance from

mounting base to heatsink

total device; both sections

equally loaded.

0.15 K/W

Fig.2 DC SOAR.

(1) Current is this area may be limited by RDS(on).

(2) Tmb = 25 °C.

Total device; both sections equally loaded.

handbook, halfpage

102

110

VDS (V)

(A)

102

(1)

MRA933

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

100

150

600

200

400

MGP203

Th (°C)

Ptot

(W)

(2)

(1)

BLF248 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

BLF248 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Scheda tecnica Scarica

Link URL