| Motore di ricerca datesheet componenti elettronici |
|
BLF521 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BLF521 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
|
3 / 14 page ![]() November 1992 3 Philips Semiconductors Product specification UHF power MOS transistor BLF521 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Mounted on printed circuit board, see Fig.12. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 1A Ptot total power dissipation up to Tmb =25 °C − 10 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 17.5 K/W Rth j-a thermal resistance from junction to ambient (note 1) 75 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =25 °C. handbook, halfpage 0.1 1 1 10 100 5 (1) ID (A) VDS (V) MRA989 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 40 80 160 16 12 4 0 8 120 MDA486 (1) (2) Ptot (W) Tmb ( °C) |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |