BLF545 datasheet(3/12 Pages) PHILIPS

3 / 12 page

October 1992

Philips Semiconductors

Product speciﬁcation

UHF push-pull power MOS transistor

BLF545

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise speciﬁed.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

±V

gate-source voltage

−

DC drain current

−

3.5

Ptot

total power dissipation

up to Tmb =25 °C; total device;

both sections equally loaded

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

Rth j-mb

thermal resistance from junction to

mounting base

total device; both sections equally

loaded

1.9 K/W

Rth mb-h

thermal resistance from mounting

base to heatsink

total device; both sections equally

loaded

0.25 K/W

Fig.2 DC SOAR.

(1) Current in this area may be limited by RDS(on).

(2) Tmb =25 °C.

Total device; both sections equally loaded.

handbook, halfpage

110

MRA995

102

(1)

(A)

VDS (V)

(2)

Fig.3 Power/temperature derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

Total device; both sections equally loaded.

handbook, halfpage

(1)

(2)

Ptot

(W)

160

120

MBK463

Th ( °C)

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