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FN4F4Z Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte FN4F4Z
Spiegazioni elettronici  SILICON TRANSISTOR
PDF  24 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FN4F4Z Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D16491EJ3V0DS
2
FN4xxx
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB =
−50 V, IE = 0
−100
nA
DC Current Gain
hFE1
VCE =
−5.0 V, IC = −5.0 mA
Note1
-
hFE2
VCE =
−5.0 V, IC = −50 mA
-
Collector Saturation Voltage
VCE(sat)
IC =
−5.0 mA, IB = −0.25 mA
−0.2
V
Low-level Input Voltage
VIL
VCE =
−5.0 V, IC = −100
μA
Note2
V
High-level Input Voltage
VIH
VCE =
−0.2 V, IC = −5.0 mA
V
Input Resistor
R1
Note3
k
Ω
Emitter to Base Resistor
R2
k
Ω
Note 1.
PART NUMBER
hFE1
hFE2
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
FN4A4M
35
100
80
-
FN4F4M
60
195
90
-
FN4L4M
85
340
95
-
FN4L3M
20
80
80
-
FN4L3N
35
100
80
-
FN4L3Z
135
600
100
-
FN4A3Q
35
100
80
-
FN4A4P
85
340
95
-
FN4F4N
85
340
95
-
FN4L4L
60
195
90
-
FN4A4Z
135
600
100
-
FN4F4Z
135
600
100
-
FN4L4Z
135
600
100
-
FN4F3M
8
50
50
-
FN4F3P
35
100
80
-
FN4F3R
85
340
95
-
FN4A4L
20
80
80
-
FN4L4K
35
100
80
-
Note 2.
PART NUMBER
VIL
VIH
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
FN4A4M
−0.8
−3.0
V
FN4F4M
−0.8
−4.0
V
FN4L4M
−0.8
−5.0
V
FN4L3M
−0.8
−3.0
V
FN4L3N
−0.6
−3.0
V
FN4L3Z
−0.5
−1.2
V
FN4A3Q
−0.5
−2.0
V
FN4A4P
−0.5
−3.0
V
FN4F4N
−0.6
−3.0
V
FN4L4L
−0.9
−6.0
V
FN4A4Z
−0.5
−2.0
V
FN4F4Z
−0.5
−3.0
V
FN4L4Z
−0.5
−4.0
V
FN4F3M
−0.8
−3.0
V
FN4F3P
−0.5
−2.0
V
FN4F3R
−0.5
−2.0
V
FN4A4L
−0.9
−6.0
V
FN4L4K
−2.0
−8.0
V



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