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SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

DATA SHEET

Document No. D16495EJ5V0DS00 (5th edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Compact package

• Resistors built-in type

• Complementary to KN4xxx

ORDERING INFORMATION

PART NUMBER

PACKAGE

KA4xxx

SC-75 (USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

Note1

V

Collector Current (DC)

IC

0.1

A

Collector Current (pulse)

Note2

IC(pulse)

0.2

A

Total Power Dissipation

Note3

PT

0.2

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Note 1.

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

KA4A4M

10

A4

10.0

10.0

KA4L4L

15

K4

47.0

22.0

KA4F4M

10

B4

22.0

22.0

KA4A4Z

5

Y4

10.0

KA4L4M

10

C4

47.0

47.0

KA4F4Z

5

Z4

22.0

KA4L3M

10

D4

4.7

4.7

KA4L4Z

5

N4

47.0

KA4L3N

5

E4

4.7

10.0

KA4F3M

10

P4

2.2

2.2

KA4L3Z

5

F4

4.7

KA4F3P

5

Q4

2.2

10.0

KA4A3Q

5

G4

1.0

10.0

KA4F3R

5

R4

2.2

47.0

KA4A4P

5

H4

10.0

47.0

KA4A4L

15

S4

10.0

4.7

KA4F4N

5

X4

22.0

47.0

KA4L4K

25

T4

47.0

10.0

Note 2. PW

≤ 10 ms, Duty Cycle ≤ 50%

Note 3. Mounted on ceramic substrate of 3.0 cm

2

x 0.64 mm

PACKAGE DRAWING (Unit: mm)

0.6

0.75 ± 0.05

0 to 0.1

0.15

+0.1

–0.05

0.5

2

1

3

1.0

1.6 ± 0.1

0.2

+0.1

–0

0.5

0.3

+0.1

–0

EQUIVALENT CIRCUIT

2

R1

R2

1

3

PIN CONNECTION

1: Emitter

2: Base

3: Collector

<R>