March 1993

2

Philips Semiconductors

Product specification

UHF power transistor

BLV97CE

FEATURES

• Internal input matching to achieve high power gain

• Ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability

DESCRIPTION

NPN silicon planar epitaxial transistor in a SOT171

envelope, intended for common emitter, class-AB

operation in radio transmitters for the 960 MHz

communications band. The transistor has a 6-lead flange

envelope, with a ceramic cap. All leads are isolated from

the flange.

QUICK REFERENCE DATA

MODE OF OPERATION

f (MHz)

c.w. class-AB

960

24

35

> 7

> 50

PINNING - SOT171A

PIN

SYMBOL

DESCRIPTION

1

e

emitter

2

e

emitter

3

b

base

4

c

collector

5

e

emitter

6

e

emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM141

Top view

e

c

b

1

2

3

4

5

6

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.