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FKBA3103 Scheda tecnica(PDF) 1 Page - FETek Technology Corp. |
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FKBA3103 Scheda tecnica(HTML) 1 Page - FETek Technology Corp. |
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1 / 4 page  FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBA3103 P-Ch 30V Fast Switching MOSFETs 11 Symbol Parameter Rating Units 10s Steady State VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -35 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -22 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -13.4 -8.5 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -10.7 -6.8 A IDM Pulsed Drain Current2 -95 A EAS Single Pulse Avalanche Energy3 72.2 mJ IAS Avalanche Current -38 A PD@TC=25℃ Total Power Dissipation4 34.7 W PD@TA=25℃ Total Power Dissipation4 5 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.6 ℃/W BVDSS RDSON ID -30V 20m Ω -35A The FKBA3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3103 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Description Absolute Maximum Ratings Thermal Data PRPAK5X6 Pin Configuration Product Summary |
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