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FKBA3202 Scheda tecnica(PDF) 2 Page - FETek Technology Corp. |
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FKBA3202 Scheda tecnica(HTML) 2 Page - FETek Technology Corp. |
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2 / 4 page ![]() FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKBA3202 Dual N-Channel MOSFET 2 Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A --- 15 18 m VGS=4.5V , ID=10A --- 21 30 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.3 V IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=30V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Qg Total Gate Charge (10V) VDS=15V , VGS=10V , ID=10A --- 9 14.8 nC Qg Total Gate Charge (4.5V) --- 4.5 7.8 Qgs Gate-Source Charge --- 1.85 3.2 Qgd Gate-Drain Charge --- 1.55 2.7 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3 ID=1A --- 7 --- ns Tr Rise Time --- 13 --- Td(off) Turn-Off Delay Time --- 19 --- Tf Fall Time --- 3.2 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 489 733 pF Coss Output Capacitance --- 76 105 Crss Reverse Transfer Capacitance --- 56 84 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 10 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics |
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