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FKBA3202 Scheda tecnica(PDF) 2 Page - FETek Technology Corp.

Il numero della parte FKBA3202
Spiegazioni elettronici  Dual N-Channel MOSFET
PDF  4 Pages
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Produttore elettronici  FETEK [FETek Technology Corp.]
Homepage  http://www.fetek.com.tw
Logo FETEK - FETek Technology Corp.

FKBA3202 Scheda tecnica(HTML) 2 Page - FETek Technology Corp.

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FETek Technology Corp.
Data and specifications subject to change without notice.
www.fetek.com.tw
Ver : A
FKBA3202
Dual N-Channel MOSFET
2
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=10A
---
15
18
m
VGS=4.5V , ID=10A
---
21
30
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.7
2.3
V
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=30V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
12
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
---
Qg
Total Gate Charge (10V)
VDS=15V , VGS=10V , ID=10A
---
9
14.8
nC
Qg
Total Gate Charge (4.5V)
---
4.5
7.8
Qgs
Gate-Source Charge
---
1.85
3.2
Qgd
Gate-Drain Charge
---
1.55
2.7
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3
ID=1A
---
7
---
ns
Tr
Rise Time
---
13
---
Td(off)
Turn-Off Delay Time
---
19
---
Tf
Fall Time
---
3.2
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
489
733
pF
Coss
Output Capacitance
---
76
105
Crss
Reverse Transfer Capacitance
---
56
84
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
10
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics



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