STB200NF04L datasheet(2/12 Pages) STMICROELECTRONICS

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STP200NF04L - STB200NF04L - STB200NF04L-1

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Table 3: Absolute Maximum ratings

(1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX

(2) Pulse width limited by safe operating area.

(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V

(**) Current limited by Package

Table 4: Thermal Data

(*)When mounted on 1 inch² FR4 2oZ Cu

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VGDR

Drain-gate Voltage (RGS=20 KΩ)

VGS

Gate- source Voltage

± 16

ID (**)

Drain Current (continuous) at TC = 25°C

120

Drain Current (continuous) at TC = 100°C

120

IDM (2)

Drain Current (pulsed)

480

PTOT

Total Dissipation at TC = 25°C

300

Derating Factor

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.6

V/ns

EAS (3)

Single Pulse Avalanche Energy

1.4

Tstg

Storage Temperature

-55 to 175

°C

Max. Operating Junction Temperature

TO-220/I²PAK

D²PAK

Unit

Rthj-case

Thermal Resistance Junction-case

Max

0.50

°C/W

Rthj-pcb (*)

Thermal Resistance Junction-pcb

Max

°C/W

Rthja

Thermal Resistance Junction-ambient

Max

62.5

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS= Max Rating

VD = Max Rating, TC= 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

VGS(th)

Gate Threshold Voltage VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 50 A

VGS = 5 V, ID = 50 A

TO-220

I²PAK

3.3

3.8

4.6

Ω

VGS = 10 V, ID = 50 A

VGS = 5 V, ID = 50 A

D²PAK

3.0

3.5

4.3

Ω

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