August 1986

2

Philips Semiconductors

Product specification

VHF power transistor

BLY87C

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile, h.f. and

v.h.f. transmitters with a nominal

supply voltage of 13,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage 16,5 V.

It has a 3/8" capstan envelope with a

ceramic cap. All leads are isolated

from the stud.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

mS

c.w.

13,5

175

8

>

12,0

>

60

2,2

+ j0,4

96

− j28

c.w.

12,5

175

8

typ.

11,5

typ.

65

−−

PIN CONFIGURATION

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

MSB056

2

3

1

4

PINNING - SOT120

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.