BR101 datasheet(5/8 Pages) PHILIPS

5 / 8 page

1997 Jul 24

Philips Semiconductors

Product speciﬁcation

Silicon controlled switch

BR101

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

NPN transistor

ICER

collector cut-off current

VCE =50V; RBE =10kΩ−

−

500

VCE =50V; RBE =10kΩ; Tj = 150 °C −−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V; Tj = 150 °C

−−

µA

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB =1mA

−−

500

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB =1mA

−−

900

hFE

DC current gain

IC = 10 mA; VCE =2V

−−

transition frequency

IC = 10 mA; VCE =2V

−

300

−

MHz

collector capacitance

IE =ie = 0; VCB = 20 V; f = 1 MHz

−−

5pF

emitter capacitance

IC =ic = 0; VEB =1V

−−

PNP transistor

ICEO

collector cut-off current

IB = 0; VCE = −50 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −50 V; Tj = 150 °C

−−−50

µA

hFE

DC current gain

IE = 1 mA; VCB = 0 V

0.25

−

2.5

Combined device

VAK

forward on-state voltage

RKG-K =10kΩ

IA = 50 mA; IAG =0

−−

1.4

IA = 1 mA; IAG =10mA

−−

1.2

holding current

RKG-K =10kΩ;IAG =10mA;

VBB = −2V

−−

1mA

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