BSP110 datasheet(2/12 Pages) PHILIPS

Il numero della parte	BSP110

Spiegazioni elettronici	N-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

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Produttore elettronici	PHILIPS [NXP Semiconductors]

Homepage	http://www.nxp.com

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2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP110

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a

miniature SOT223 envelope and

designed for use in telephone ringer

circuits and for application in relay,

high-speed and line transformer

drivers.

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown

PINNING - SOT223

MARKING CODE

BSP110

1 = gate

2 = drain

3 = source

4 = drain

QUICK REFERENCE DATA

Drain-source voltage

VDS

max.

80 V

Drain source voltage

(non-repetitive peak; tp ≤ 2 ms)

VDS(SM)

max.

100 V

Gate-source voltage (open drain)

± V

GSO

max.

20 V

Drain current (DC)

max.

325 mA

Total power dissipation up to Tamb =25 °CPtot

max.

1.5 W

Drain-source ON-resistance

typ.

max.

4.5

Ω

ID = 200 mA; VGS =10V

RDS(on)

Transfer admittance

min.

typ.

150

ID = 200 mA; VDS =15V

 Yfs 

PIN CONFIGURATION

Fig.1 Simplfied outline and symbol.

handbook, halfpage

MAM054

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