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3CD104 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3CD104 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 3CD104 DESCRIPTION · Collector-Emitter Breakdown Voltage- : VCEO=-100V(Min) · Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS · Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A PD Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature Range -55~200 ℃ |
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