BSS63 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

BSS63

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −90 V

−−−100 nA

IE = 0; VCB = −90 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −6V

−−−100 nA

hFE

DC current gain

IC = −10 mA; VCE = −1V

−−

IC = −25 mA; VCE = −1V

−−

VCEsat

collector-emitter saturation voltage

IC = −25 mA; IB = −2.5 mA

−−−250 mV

VBEsat

base-emitter saturation voltage

IC = −25 mA; IB = −2.5 mA

−−−900 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −25 mA; VCE = −5V;

f = 100 MHz

−

MHz

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