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WSGPA01-V1-R3K Scheda tecnica(PDF) 2 Page - WOLFSPEED, INC. |
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WSGPA01-V1-R3K Scheda tecnica(HTML) 2 Page - WOLFSPEED, INC. |
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2 / 7 page ![]() 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Rev. 02.1, 2021-07-13 2 WSGPA01 Absolute Maximum Ratings (Case Temperature TCASE = 25˚C) Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 1.2 mA Drain Current ID 12 A Operating Voltage VDD 55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. DC Characteristics Characteristics Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-Source Leakage Current VGS = –8 V, VDS = 50 V IGSS — — –0.5 mA Gate Threshold Voltage VDS = 10 V, ID = 1.2 mA VGS(th) –3.8 –3.1 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 25 mA VGS(Q) –3.45 –2.9 –2.45 V Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance (TCASE = 105°C, POUT = 26.5 dBM CW) RqJC 10.1 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD-020 260 °C ESD Characteristics Parameter Class Standard Human Body Model (HBM) Class 1A ANSI/ESDA/JEDEC JS-001 Charge Device Model (CDM) Class C2b ANSI/ESDA/JEDEC JS-002 |
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