IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

IXFK 30N100Q2

IXFX 30N100Q2

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100 120 140 160 180 200

Fig. 7. Input Adm ittance

0

5

10

15

20

25

30

35

40

3.5

4

4.5

5

5.5

6

6.5

25ºC

-40ºC

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

55

60

0

5

10

15

20

25

30

35

40

45

50

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

10

20

30

40

50

60

70

80

90

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

Fig. 12. Maxim um Transient Therm al

Resistance

0.01

0.10

1.00

1

10

100

1000

Pulse Width - milliseconds