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GS66508B Scheda tecnica(PDF) 6 Page - GaN Systems Inc. |
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GS66508B Scheda tecnica(HTML) 6 Page - GaN Systems Inc. |
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6 / 16 page ![]() GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Rev 200402 © 2009-2020 GaN Systems Inc. 6 Submit datasheet feedback Electrical Performance Graphs IDS vs. VDS, TJ dependence Gate Charge, QG Characteristic Figure 5: Typical IDS vs. VDS @ VGS = 6 V Figure 6: Typical VGS vs. QG @ VDS = 100, 400 V Capacitance Characteristics Stored Energy Characteristic Figure 7: Typical CISS, COSS, CRSS vs. VDS Figure 8: Typical COSS Stored Energy |
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