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BU2507DF Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BU2507DF
Spiegazioni elettronici  Silicon Diffused Power Transistor
PDF  6 Pages
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2507DF Scheda tecnica(HTML) 3 Page - NXP Semiconductors

  BU2507DF Datasheet HTML 1Page - NXP Semiconductors BU2507DF Datasheet HTML 2Page - NXP Semiconductors BU2507DF Datasheet HTML 3Page - NXP Semiconductors BU2507DF Datasheet HTML 4Page - NXP Semiconductors BU2507DF Datasheet HTML 5Page - NXP Semiconductors BU2507DF Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507DF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. High and low DC current gain. h
FE = f (IC)
V
CE = 1 V
Fig.5. High and low DC current gain. h
FE = f (IC)
V
CE = 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
BU2507DF/X
0.01
0.1
1
10
1
10
100
IC / A
hFE
Ths = 25 C
Ths = 85 C
VCE = 1 V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2507DF/X
0.01
0.1
1
10
1
10
100
IC / A
hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
+ 150 v nominal
adjust for ICsat
1mH
12nF
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
100
0.01
0.1
1
10
IC / A
VCESAT / V
Ths = 25 C
Ths = 85 C
IC/IB = 3
IC/IB = 4
IC/IB = 5
BU2507DF/X
September 1997
3
Rev 1.200



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