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BUV42 Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte BUV42
Spiegazioni elettronici  SILICON NPN SWITCHING TRANSISTOR
PDF  5 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUV42 Scheda tecnica(HTML) 2 Page - STMicroelectronics

  BUV42 Datasheet HTML 1Page - STMicroelectronics BUV42 Datasheet HTML 2Page - STMicroelectronics BUV42 Datasheet HTML 3Page - STMicroelectronics BUV42 Datasheet HTML 4Page - STMicroelectronics BUV42 Datasheet HTML 5Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
1. 46
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
ICER
Collector Cut -off
Current (RBE =10
Ω)
VCE =VCEV
VCE =VCEV
Tc =100
o C
0.5
2.5
mA
mA
ICEV
Collector Cut -off
Current
VCE =VCEV
VBE =-1.5V
VCE =VCEV
VBE =- 1.5V TC=100
oC
0.5
2
mA
mA
IEBO
Emitter Cut- off
Current (IC =0)
VEB =5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC =0.2A
L= 25 mH
250
V
VEB0
Emitter-base
Voltage (Ic =0)
IE =50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Sat uration Voltage
IC =2A
IB = 0.13A
IC =4A
IB =0.4A
IC =6A
IB = 0.75A
IC =2A
IB = 0.13A
Tj = 100
oC
IC =4A
IB =0.4A
Tj =100
oC
IC =6A
IB = 0.75A
Tj = 100
oC
0.25
0. 4
0. 5
0.25
0.45
0. 6
0.8
0.9
1.2
0.9
1.2
1.5
V
V
V
V
V
V
VBE(sat)
∗ Base-Emitter
Sat uration Voltage
IC =4A
IB =0.4A
IC =6A
IB = 0.75A
IC =4A
IB =0.4A
Tj =100
oC
IC =6A
IB = 0.75A
Tj = 100
oC
1
1. 1
0. 9
1. 1
1.3
1.5
1.3
1.5
V
V
V
V
dic/dt
∗
Rat ed of Rise of
on-st ate Collector
Current
VCC =200V
RC =0
IB1 = 0.6A
Tj =25
oC
Tj =100
oC
25
20
40
35
A/
µs
A/
µs
VCE(2µs)
Collector Emitter
Dynamic Voltage
VCC =200V
IB1 =0.4A
RC =50
Ω
Tj =25
oC
Tj =100
oC
1. 7
2. 5
2.5
4
V
V
VCE(4µs)
Collector Emitter
Dynamic Voltage
VCC = 200V
IB1 =0.4A
RC =50
Ω
Tj =25
oC
Tj =100
oC
0. 9
1. 1
1.7
2
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
BUV42
2/5



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