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DPG20C200PB Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DPG20C200PB Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Schottky Barrier Rectifier DPG20C200PB www.iscsemi.com 2023-8-18 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply ·Low Voltage High Frequency Invers Circuit ·Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 35 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.3 ℃ /W |
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