BU508DX datasheet(2/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

2500

three terminals to external

heatsink

isol

Capacitance from T2 to external f = 1 MHz

heatsink

STATIC CHARACTERISTICS

hs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

CES

Collector cut-off current

BE = 0 V; VCE = VCESMmax

1.0

CES

BE = 0 V; VCE = VCESMmax;

2.0

j = 125 ˚C

EBO

Emitter cut off current

EB = 6.0 V; IC = 0 A

CEOsust

Collector-emitter sustaining voltage

B = 0 A; IC = 100 mA;

700

L = 25 mH

CEsat

Collector-emitter saturation voltages I

C = 4.5 A; IB = 1.6 A

1.0

BEsat

Base-emitter saturation voltage

C = 4.5 A; IB = 1.6 A

1.3

DC current gain

C = 100 mA; VCE = 5 V

Diode forward voltage

F = 4.5 A

1.6

2.0

DYNAMIC CHARACTERISTICS

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Transition frequency at f = 5 MHz

C = 0.1 A;VCE = 5 V

MHz

Collector capacitance at f = 1MHz

CB = 10 V

125

Switching times (16 kHz line

Csat = 4.5 A;Lc 1 mH;Cfb = 4 nF

deflection circuit)

B(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;

-I

BM = 2.25 A

Turn-off storage time

6.5

µs

Turn-off fall time

0.7

µs

1 Measured with half sine-wave voltage (curve tracer).

July 1998

Rev 1.200

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