T1635H datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

T1635H Series

Characteristics

5/10

Figure 9.

Relative variation of critical rate

of decrease of main current (di/dt)c

versus junction temperature

Figure 10.

Relative variation of critical rate of

decrease of main current (di/dt)c vs

reapplied dV/dt (typical values)

100

125

150

(dI/dt)

c [Tj]/ (dI/dt)c [Tj=150°C]

Tj(°C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

dV/dt (V/µs)

Figure 11.

Variation of thermal resistance,

junction to ambient versus copper

surface under tab (PCB FR4,

eCU 35 µm)

Figure 12.

Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 13.

Acceptable repetitive peak

off-state voltage versus case-

ambient thermal resistance

th(j-a)(°C/W)

D²PAK

SCU(cm²)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

125

150

DRM/IRRM(mA)

DRM=VRRM=400 V

DRM=VRRM=600 V

DRM=VRRM=200 V

Tj(°C)

300

350

400

450

500

550

600

th(c-a)(°C/W)

th(j-c)=1.2 °C/W

J=150 °C

VDRM/VRRM(V)

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