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MASTERGAN2 Scheda tecnica(PDF) 7 Page - STMicroelectronics

Il numero della parte MASTERGAN2
Spiegazioni elettronici  High power density 600V Half bridge driver with two enhancement mode GaN HEMT
PDF  29 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MASTERGAN2 Scheda tecnica(HTML) 7 Page - STMicroelectronics

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Symbol
Parameter
Test condition
Min Typ Max Unit
Logic inputs
Vil
LIN, HIN, SD/OD
Low level logic threshold
TJ = 25°C
1.1 1.31 1.45
V
Full Temperature range (5) 0.8
Vih
High level logic threshold
TJ = 25°C
2
2.17 2.5
V
Full Temperature range(5)
2.7
Vihys
Logic input threshold hysteresis
0.7 0.96 1.2
V
IINh
LIN, HIN
Logic ‘1’ input bias current
LIN, HIN = 5 V
23
33
55
μA
IINl
Logic ‘0’ input bias current
LIN, HIN = GND
1
μA
RPD_IN
Input pull-down resistor
LIN, HIN = 5 V
90
150 220
ISDh
SD/OD
Logic “1” input bias current
SD/OD = 5 V
11
15
20
μA
ISDl
SD/OD
Logic “0” input bias current
SD/OD = 0 V
1
μA
RPD_SD
SD/OD
Pull-down resistor
SD/OD = 5 V
OpenDrain OFF
250 330 450
VTSD
SD/OD
Thermal shutdown unlatch threshold
TJ = 25°C (6)
0.5 0.75
1
V
RON_OD
SD/OD
Open drain ON resistance
TJ = 25°C;
IOD = 400 mV(6)
8
10
18
Ω
IOL_OD
SD/OD
Open Drain low level sink current
TJ = 25°C;
VOD = 400 mV(6)
22
40
50
mA
Td_GL
LIN,GL
Prop. delay from LIN to GL
(6)
-
46
-
Td_GH
HIN,GH
Prop. delay from HIN to GH
(6)
-
46
-
Overtemperature protection
TTSD
Shutdown temperature
(5)
175
°C
THYS
Temperature hysteresis
(5)
20
°C
1. VCC UVLO is referred to VCC - GND
2. Turn on and turn off total resistances include the values of the gate resistors and the driver Rdson
3. VBO = VBOOT - VOUT
4. RBD(on) is tested in the following way:
RBD(on) = [(VCC - VBOOTa) - (VCC - VBOOTb)] / [Ia - Ib]
Where: Ia is BOOT pin current when VBOOT = VBOOTa; Ib is BOOT pin current when VBOOT = VBOOTb
5. Range estimated by characterization, not tested in production.
6. Tested at wafer level.
MASTERGAN2
Driver
DS13597 - Rev 2.0
page 7/29



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