1

3

TAB

2

DPAK

C(2, TAB)

E(3)

NG1E3C2T

G(1)

Features

•

Maximum junction temperature: TJ = 175 °C

•

Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A

•

Tight parameter distribution

•

Low thermal resistance

•

Short-circuit rated

•

Soft and fast recovery antiparallel diode

Applications

•

Industrial motor control

•

Dishwashers

•

Refrigerators and freezers

•

Fans

Description

This device is an IGBT developed using an advanced proprietary trench gate

field-stop structure. This device is part of the H series of IGBTs, which represent

an optimum compromise between conduction and switching losses to maximize

the efficiency of high switching frequency converters. Moreover, a slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGD4H60DF

Product summary

Order code

STGD4H60DF

Marking

G4H60DF

Package

DPAK

Packing

Tape and reel

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

STGD4H60DF

Datasheet

DS13901 - Rev 2 - February 2023

For further information contact your local STMicroelectronics sales office.

www.st.com