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BUJ105AX Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte BUJ105AX
Spiegazioni elettronici  Silicon Diffused Power Transistor
PDF  7 Pages
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ105AX Scheda tecnica(HTML) 2 Page - NXP Semiconductors

  BUJ105AX Datasheet HTML 1Page - NXP Semiconductors BUJ105AX Datasheet HTML 2Page - NXP Semiconductors BUJ105AX Datasheet HTML 3Page - NXP Semiconductors BUJ105AX Datasheet HTML 4Page - NXP Semiconductors BUJ105AX Datasheet HTML 5Page - NXP Semiconductors BUJ105AX Datasheet HTML 6Page - NXP Semiconductors BUJ105AX Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
0.5
mA
T
j = 125 ˚C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax (400V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.0A;IB = 0.8 A
-
0.3
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.0A;IB = 0.8 A
-
1.0
1.5
V
h
FE
DC current gain
I
C = 1 mA; VCE = 5 V
10
14
34
h
FE
I
C = 500 mA; VCE = 5 V
13
23
36
h
FEsat
I
C = 4.0 A; VCE = 5 V
8
11
15
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.65
1
µs
t
s
Turn-off storage time
1.8
2.5
µs
t
f
Turn-off fall time
0.3
0.5
µs
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
1.2
1.7
µs
t
f
Turn-off fall time
20
50
ns
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
1.4
1.9
µs
t
f
Turn-off fall time
25
100
ns
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000



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