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UPD16808GS Scheda tecnica(PDF) 3 Page - Renesas Technology Corp

Il numero della parte UPD16808GS
Spiegazioni elettronici  MOS INTEGRATED CIRCUIT
PDF  14 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD16808GS Scheda tecnica(HTML) 3 Page - Renesas Technology Corp

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©
1997
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16808
Document No. S12720EJ2V0DS00 (2nd edition)
Date Published September 1997 N
Printed in Japan
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver
stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially
improved as compared with conventional driver circuits that use bipolar transistors.
Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver
circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.
FEATURES
•
Low ON resistance (sum of ON resistors of top and bottom FETS)
RON1 = 1.0
Ω TYP. (VM = 5.0 V)
RON2 = 1.5
Ω TYP. (VM = 12.0 V)
•
Low current consumption: IDD = 0.4 mA TYP.
•
Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected)
•
Motor voltage 12 V/5 V compatible
•
Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
1
3
4
5
6
7
8
9
10
C1H
C2L
1A
2A
PGND1
VM1
VDD
IN3
IN1
IN2
C1L
C2H
1B
2B
PGND2
VG
VM2
DGND
SEL
IN4
2
20
18
17
16
15
14
13
12
11
19



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