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FQB11P06 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FQB11P06 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor FQB11P06 FEATURES · Drain Current –ID=-11.4A@ TC=25℃ · Drain Source Voltage- : VDSS=-60V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.175Ω(Max)@VGS= -10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ± 25 V ID Drain Current-Continuous -11.4 A IDM Drain Current-Single Pluse -45.6 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.85 ℃ /W |
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