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7705201FC Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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7705201FC Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
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3 / 11 page ![]() DG508A_MIL/509A_MIL Vishay Siliconix Document Number: 70067 S-00405—Rev. C, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 5-3 ABSOLUTE MAXIMUM RATINGS Voltage Referenced to V– V+ 44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputsa, VS, VD (V–) –2 V to (V+) +2 V or . . . . . . . . . . . . . . . . . . . . . . . . 20 mA, whichever occurs first Current (Any Terminal, Except S or D) 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Current, S or D 20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Max) 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature (K Suffix) –65 to 150 _C . . . . . . . . . . . . . . . . . . . (J and Y Suffix) –65 to 125 _C . . . . . . . . . . . . . . Power Dissipation (Package)b 16-Pin CerDIPc 900 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LCC-20c 900 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 12 mW/ _C above 75_C. SPECIFICATIONSa P Sb l Test Conditions Unless Otherwise Specified T b A Suffix –55 to 125 _C Ui Parameter Symbol V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full –15 15 V Drain-Source On-Resistance rDS(on) VD = "10 V, IS = –200 mA Room Full 240 400 500 W rDS(on) Match DrDS(on) –10 V < VS < 10 V Room 6 % Source Off Leakage Current IS(off) VEN = 0 V, VS = "10 V VD = #10 V Room Full –1 –50 1 50 A Drain Off Lk C t ID(off) VEN = 0 V VD = "10 V DG508A_MIL Room Full –10 –200 10 200 A Leakage Current ID(off) VD = "10 V VS = #10 V DG509A_MIL Room Full –10 –100 10 100 nA Drain On Lk C t ID(on) VS = VD = "10 V DG508A_MIL Room Full –10 –200 10 200 Leakage Current ID(on) VS = VD = "10 V DG509A_MIL Room Full –10 –100 10 100 Digital Control Logic Input Current It V lt Hi h IAH VA = 2.4 V Room Full –10 –30 –0.002 A gp Input Voltage High IAH VA = 15 V Room Full 0.006 10 30 mA Logic Input Current Input Voltage Low IAL VEN = 0 V, 2.4 V, VA = 0 V Room Full –10 –30 –0.002 Dynamic Characteristics Transition Time tTRANS See Figure 2 Room 0.6 1.0 Break-Before-Make Time tOPEN See Figure 4 Room 0.2 ms Enable Turn-On Time tON(EN) See Figure 3 Room 1 1.5 ms Enable Turn-Off Time tOFF(EN) See Figure 3 Room 0.4 1.0 Charge Injection Q See Figure 5 Room 6 pC Off Isolation OIRR VEN = 0 V, RL = 1 kW, CL = 15 pF VS = 7 VRMS, f = 500 kHz Room 68 dB Logic Input Capacitance Cin f = 1 MHz Room 8 F Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 140 kHz Room 6 pF Drain Off Capacitance CD(off) VEN = 0 V, VD = 0 V f 140 kH DG508A_MIL Room 25 pF Drain Off Capacitance CD(off) EN , D f = 140 kHz DG509A_MIL Room 12 |
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