Document Number 88533

09-Oct-06

www.vishay.com

3

B40C800DM thru B380C800DM

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Figure 4. Typical Forward Characteristics Per Diode

0

10

100

0

10

20

30

40

50

1.0 Cycle

Number of Cycles at 50 Hz

10 ms Single Sine-Wave

0.4

0.8

1.2

10

1

0.1

0.01

0.6

1.0

1.4

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Figure 5. Typical Reverse Leakage Characteristics Per Diode

Figure 6. Typical Junction Capacitance Per Diode

0

20

40

60

80

100

0.01

0.1

1

10

Percent of Rated Peak Reverse Voltage (%)

1

10

100

1

10

100

f = 1.0 MHz

Reverse Voltage (V)

0.315 (8.00)

0.285 (7.24)

0.013 (3.3)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.255 (6.5)

0.245 (6.2)

0.335 (8.51)

0.320 (8.12)

0.045 (1.14)

0.035 (0.89)

0.080 (2.03)

0.050 (1.27)

0.023 (0.58)

0.018 (0.46)

0.185 (4.69)

0.150 (3.81)

0.130 (3.3)

0.120 (3.05)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

Case Style DFM