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2SC5865 Scheda tecnica(PDF) 1 Page - Rohm |
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2SC5865 Scheda tecnica(HTML) 1 Page - Rohm |
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1 / 5 page ![]() 2SC5865 Transistors 1/4 High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features 1) High speed switching. ( Tf : Typ. : 50ns at IC=1.0A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC=500mA, IB=50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SA2092. Applications High speed switching, Low noise Dimensions (Unit : mm) Each lead has same dimensions Abbreviated symbol : VU TSMT3 (1) Base (2) Emitter (3) Collector 0~0.1 0.16 0.85 1.0MAX 0.7 (2) (1) (3) 2.9 1.9 0.95 0.95 0.4 Structure NPN silicon epitaxial planar transistor Packaging specifications Taping 2SC5865 Type TL 3000 Package Basic ordering unit (pieces) Code Absolute maximum ratings (Ta=25 °C) Parameter V V V A mW ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land ∗2 ∗1 °C A °C VCBO VCEO IC PC Tj VEBO ICP Tstg Symbol 60 60 6 1.0 2.0 500 150 −55 to +150 Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature |
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