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B2D30120HC1 Scheda tecnica(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D30120HC1 Scheda tecnica(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() 2 backside 3 1 B2D30120HC1 SiC Schottky Diode V RRM 1200 V 30 A** 178 nC** I F (TC=155°C) Q C Package: TO-247-3 Product Summary 2 3 1 1 / 7 www.basicsemi.com Electrical Connection Features Benefits Low leakage current (I R) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on V F High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI Applications Pin1 - Anode Pin2 and backside - Cathode Pin3 - Anode Package Pin Definitions Package Parameters Part Number Marking Package B2D30120HC1 B2D30120HC1 TO-247-3 * Per Leg, ** Per Device Rev. 1.2 |
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