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CST12.0MTWA Scheda tecnica(PDF) 124 Page - STMicroelectronics

Il numero della parte CST12.0MTWA
Spiegazioni elettronici  8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT TIMERS, SPI, SCI INTERFACES
PDF  153 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

CST12.0MTWA Scheda tecnica(HTML) 124 Page - STMicroelectronics

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EMC CHARACTERISTICS (Cont’d)
16.7.2 Absolute Electrical Sensitivity
Based on three different tests (ESD, LU and DLU)
using specific measurement methods, the product
is stressed in order to determine its performance in
terms of electrical sensitivity. For more details, re-
fer to the AN1181 ST7 application note.
16.7.2.1 Electro-Static Discharge (ESD)
Electro-Static Discharges (3 positive then 3 nega-
tive pulses separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends of the
number of supply pins of the device (3 parts*(n+1)
supply pin). Two models are usually simulated:
Human Body Model and Machine Model. This test
conforms to the JESD22-A114A/A115A standard.
See Figure 75 and the following test sequences.
Human Body Model Test Sequence
– CL is loaded through S1 by the HV pulse gener-
ator.
– S1 switches position from generator to R.
– A discharge from CL through R (body resistance)
to the ST7 occurs.
– S2 must be closed 10 to 100ms after the pulse
delivery period to ensure the ST7 is not left in
charge state. S2 must be opened at least 10ms
prior to the delivery of the next pulse.
Machine Model Test Sequence
– CL is loaded through S1 by the HV pulse gener-
ator.
– S1 switches position from generator to ST7.
– A discharge from CL to the ST7 occurs.
– S2 must be closed 10 to 100ms after the pulse
delivery period to ensure the ST7 is not left in
charge state. S2 must be opened at least 10ms
prior to the delivery of the next pulse.
– R (machine resistance), in series with S2, en-
sures a slow discharge of the ST7.
Absolute Maximum Ratings
Figure 75. Typical Equivalent ESD Circuits
Notes:
1. Data based on characterization results, not tested in production.
Symbol
Ratings
Conditions
Maximum value 1)
Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25°C
3000
V
VESD(MM)
Electro-static discharge voltage
(Machine Model)
TA=+25°C
400
ST7
S2
R=1500
S1
HIGH VOLTAGE
CL=100pF
PULSE
GENERATOR
ST7
S2
HIGH VOLTAGE
CL=200pF
PULSE
GENERATOR
S1
HUMAN BODY MODEL
MACHINE MODEL



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