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STPS30100ST Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STPS30100ST Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STPS30100ST 4/7 Figure 7. Reverse leakage current versus reverse voltage applied (typical values) Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Forward voltage drop versus forward current (high level) Figure 10. Forward voltage drop versus forward current (low level) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 10 2030 4050 6070 8090 100 IR(mA) Tj=150°C Tj=125°C Tj=25°C Tj=100°C Tj=75°C Tj=50°C VR(V) 100 1000 10000 1 10 100 F=1M H z Vosc=30m V Tj=25°C C(pF) VR (V) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IFM(A) Tj=25°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Typical values) Tj=125°C (Typical values) VFM(V) 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 Tj=25°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Typical values) Tj=125°C (Typical values) V(V) FM IFM(A) |
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