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STP80NF12 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STP80NF12 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STP80NF12 Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=80A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD=35V, TJ = 150°C 155 0.85 11 ns µC A |
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